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PD-95080A
IRFR6215PBF IRFU6215PbF
P-Channel l 175C Operating Temperature l Surface Mount (IRFR6215) l Straight Lead (IRFU6215) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l Lead-Free Description
l
HEXFET(R) Power MOSFET
D
VDSS = -150V RDS(on) = 0.295
G
ID = -13A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. The D-PAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU series) is for throughhole mounting applications. Power dissipation levels up to 1.5 watts are possible in typical surface mount applications.
D-PAK TO-252AA I-PAK TO-251AA
Absolute Maximum Ratings
Parameter
ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Linear Derating Factor Gate-to-Source Voltage Single Pulse Avalanche Energy Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds
Max.
-13 -9.0 -44 110 0.71 20 310 -6.6 11 5.0 -55 to + 175 300 (1.6mm from case )
Units
A W W/C V mJ A mJ V/ns C
Thermal Resistance
Parameter
RJC RJA RJA Junction-to-Case Junction-to-Ambient (PCB mount) ** Junction-to-Ambient
Typ.
--- --- ---
Max.
1.4 50 110
Units
C/W
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1
12/14/04
IRFR/U6215PbF
Electrical Characteristics @ TJ = 25C (unless otherwise specified)
V(BR)DSS
V(BR)DSS/TJ
Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Input Capacitance Output Capacitance Reverse Transfer Capacitance
RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf LD LS Ciss Coss Crss
Min. -150 --- --- --- -2.0 3.6 --- --- --- --- --- --- --- --- --- --- --- --- --- --- --- ---
Typ. --- -0.20 --- --- --- --- --- --- --- --- --- --- --- 14 36 53 37 4.5 7.5 860 220 130
Max. Units Conditions --- V VGS = 0V, ID = -250A --- V/C Reference to 25C, I D = -1mA 0.295 VGS = -10V, ID = -6.6A 0.58 VGS = -10V, ID = -6.6A TJ = 150C -4.0 V VDS = V GS, ID = -250A --- S VDS = -50V, ID = -6.6A -25 VDS = -150V, VGS = 0V A -250 VDS = -120V, VGS = 0V, TJ = 150C 100 VGS = 20V nA -100 VGS = -20V 66 ID = -6.6A 8.1 nC VDS = -120V 35 VGS = -10V, See Fig. 6 and 13 --- VDD = -75V --- ID = -6.6A ns --- RG = 6.8 --- RD = 12, See Fig. 10 D Between lead, --- 6mm (0.25in.) nH G from package --- and center of die contact S --- VGS = 0V --- pF VDS = -25V --- = 1.0MHz, See Fig. 5
Source-Drain Ratings and Characteristics
IS
ISM
VSD trr Qrr ton Notes:
Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Forward Turn-On Time
Min. Typ. Max. Units
Conditions D MOSFET symbol -13 --- --- showing the A G integral reverse --- --- -44 p-n junction diode. S --- --- -1.6 V TJ = 25C, IS = -6.6A, VGS = 0V --- 160 240 ns TJ = 25C, IF = -6.6A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 ) Starting TJ = 25C, L = 14mH RG = 25, IAS = -6.6A. (See Figure 12) TJ 175C
Pulse width 300s; duty cycle 2% This is applied for I-PAK, LS of D-PAK is measured between lead and
center of die contact
ISD -6.6A, di/dt -620A/s, VDD V(BR)DSS, Uses IRF6215 data and test conditions
** When mounted on 1" square PCB (FR-4 or G-10 Material ) For recommended footprint and soldering techniques refer to application note #AN-994
2
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IRFR/U6215PbF
100
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
100
-ID , Drain-to-Source Current (A)
10
-ID , Drain-to-Source Current (A)
VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V - 5.0V BOTTOM - 4.5V TOP
10
-4.5V 20s PULSE WIDTH TC = 175C
1 10
-4.5V
1 1 10
20s PULSE WIDTH Tc = 25C A
100
1
A
100
-V , Drain-to-Source Voltage (V) DS
-V , Drain-to-Source Voltage (V) DS
Fig 1. Typical Output Characteristics
Fig 2. Typical Output Characteristics
R DS(on) , Drain-to-Source On Resistance (Normalized)
100
2.5
I D = -11A
-ID , Drain-to-Source Current (A)
2.0
TJ = 25C TJ = 175C
10
1.5
1.0
0.5
1 4 5 6 7
VDS = -50V 20s PULSE WIDTH
8 9 10
A
0.0 -60 -40 -20 0 20 40 60
VGS = -10V
80 100 120 140 160 180
A
-VGS , Gate-to-Source Voltage (V)
TJ , Junction Temperature (C)
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance Vs. Temperature
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IRFR/U6215PbF
2000
1600
-VGS , Gate-to-Source Voltage (V)
V GS = 0V, f = 1MHz C iss = Cgs + C gd , Cds SHORTED C rss = C gd C oss = C ds + C gd
20
I D = -6.6A
16
VDS = -120V VDS = -75V VDS = -30V
C, Capacitance (pF)
Ciss
1200
12
Coss
800
8
Crss
400
4
0 1 10 100
A
0 0 20 40
FOR TEST CIRCUIT SEE FIGURE 13
60 80
A
-VDS , Drain-to-Source Voltage (V)
Q G , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage
100
100
-ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on)
10s
10
TJ = 175C TJ = 25C
-I D , Drain Current (A)
10
100s
1
1ms
0.1 0.2 0.6 1.0 1.4
VGS = 0V
A
1 1
TC = 25C TJ = 175C Single Pulse
10 100
10ms
A
1000
1.8
-VSD , Source-to-Drain Voltage (V)
-VDS , Drain-to-Source Voltage (V)
Fig 7. Typical Source-Drain Diode Forward Voltage
Fig 8. Maximum Safe Operating Area
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IRFR/U6215PbF
14 12
VDS VGS RG
RD
D.U.T.
+
-ID , Drain Current (A)
10 8 6 4 2
VGS
-10V
Pulse Width 1 s Duty Factor 0.1 %
Fig 10a. Switching Time Test Circuit
td(on) tr t d(off) tf
0 25 50 75 100 125 150 175
10%
TC , Case Temperature
( C)
90%
Fig 9. Maximum Drain Current Vs. Case Temperature
VDS
Fig 10b. Switching Time Waveforms
10
Thermal Response (ZthJC )
1
D = 0.50 0.20 0.10 0.05
P DM
0.1
0.02 0.01 SINGLE PULSE (THERMAL RESPONSE)
Notes: 1. Duty factor D = t /t
t
1 t2
1
2
0.01 0.00001
2. Peak TJ = PDM x Z thJC + T C
0.0001
0.001
0.01
0.1
t 1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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-
VDD
A
1
5
IRFR/U6215PbF
VDS
EAS , Single Pulse Avalanche Energy (mJ)
L
800
TOP BOTTOM
600
RG
D.U.T
IAS
VDD A DRIVER
ID -2.7A -4.7A -6.6A
-20V
tp
0.01
400
15V
200
Fig 12a. Unclamped Inductive Test Circuit
I AS
0 25 50 75 100 125 150
A
175
Starting TJ , Junction Temperature (C)
Fig 12c. Maximum Avalanche Energy Vs. Drain Current
tp V(BR)DSS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator Same Type as D.U.T.
50K
QG
12V
.2F .3F
VG
VGS
-3mA
Charge
IG
ID
Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform
Fig 13b. Gate Charge Test Circuit
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+
QGS
QGD
D.U.T.
-
-10V
VDS
IRFR/U6215PbF
Peak Diode Recovery dv/dt Test Circuit
D.U.T
+
+
Circuit Layout Considerations * Low Stray Inductance * Ground Plane * Low Leakage Inductance Current Transformer
-
+
RG * * * * dv/dt controlled by RG Driver same type as D.U.T. ISD controlled by Duty Factor "D" D.U.T. - Device Under Test
+ VDD
*
Reverse Polarity of D.U.T for P-Channel
Driver Gate Drive P.W. Period D=
P.W. Period VGS=10V
*
D.U.T. ISD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. VDS Waveform Diode Recovery dv/dt
VDD
Re-Applied Voltage Inductor Curent
Body Diode
Forward Drop
Ripple 5%
ISD
* VGS = 5V for Logic Level Devices Fig 14. For N-Channel HEXFETS
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IRFR/U6215PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120 WIT H AS S EMBLY LOT CODE 1234 AS S EMBLED ON WW 16, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in assembly line pos ition indicates "Lead-F ree" PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRFU120 12 916A 34
AS S EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WE EK 16 LINE A
OR
PART NUMBER INT ERNAT IONAL RECT IFIER LOGO
IRF U120 12 34
DAT E CODE P = DES IGNAT ES LEAD-F REE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 16 A = AS S EMBLY S IT E CODE
AS S EMBLY LOT CODE
8
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IRFR/U6215PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120 WIT H AS SEMBLY LOT CODE 5678 AS SEMB LED ON WW 19, 1999 IN T HE AS S EMBLY LINE "A" Note: "P" in ass embly line position indicates "Lead-F ree" INT ERNAT IONAL RECT IF IER LOGO PART NUMBER
IRF U120 919A 56 78
ASS EMBLY LOT CODE
DAT E CODE YEAR 9 = 1999 WEEK 19 LINE A
OR
INT ERNAT IONAL RECT IFIER LOGO PART NUMB ER
IRF U 120 56 78
AS S EMBLY LOT CODE
DAT E CODE P = DES IGNAT ES LEAD-FREE PRODUCT (OPT IONAL) YEAR 9 = 1999 WEEK 19 A = AS S EMB LY S IT E CODE
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IRFR/U6215PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR TRR TRL
16.3 ( .641 ) 15.7 ( .619 )
16.3 ( .641 ) 15.7 ( .619 )
12.1 ( .476 ) 11.9 ( .469 )
FEED DIRECTION
8.1 ( .318 ) 7.9 ( .312 )
FEED DIRECTION
NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm NOTES : 1. OUTLINE CONFORMS TO EIA-481.
Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 TAC Fax: (310) 252-7903 Visit us at www.irf.com for sales contact information.12/04
10
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Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/

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